Composition range

Molybdenum (Mo) content: 50%~90% (common grades include Mo50Cu50, Mo70Cu30, Mo85Cu15, etc.)

Copper (Cu) content: 10%~50% (adjusting the ratio can optimize thermal conductivity, electrical conductivity, and mechanical properties)

Production process

1. Main preparation methods

Powder metallurgy method (mainstream process):

Mixing powder: Mix high-purity molybdenum powder (≥ 99.95%) with copper powder.

Compression molding: Cold isostatic pressing (CIP) or compression molding.

Sintering infiltration: Under hydrogen protection, sintering at 1200-1400 ℃, copper infiltration fills the pores of the molybdenum skeleton, resulting in a density greater than 98%.

Hot/Cold Rolling Method: Molybdenum copper composite billets are annealed after rolling to improve dimensional accuracy.

2. Key quality control

Density: affects thermal conductivity, and porosity should be controlled to be less than 2%.

Interface bonding: The molybdenum copper interface needs to be free of oxidation and delamination.

Surface treatment: Nickel and gold plating can be used to improve weldability and oxidation resistance.

Application Fields

Electronic packaging

Heat dissipation substrate: used for high-power LEDs, laser diodes, IGBT modules, with thermal conductivity better than Al ₂ O ∝ ceramics.

Chip carrier: The thermal expansion coefficient matches the semiconductor, reducing thermal stress cracking.

Aerospace

Rocket nozzle liner: resistant to high temperature gas erosion (molybdenum copper 70/30 can withstand 1500 ℃).

Satellite thermal control material: high thermal conductivity+low expansion, ensuring equipment temperature stability.

Electric Power and Vacuum Devices

Vacuum switch contacts: resistant to arc erosion, with a lifespan 5-10 times longer than pure copper.

Microwave tube heat sink: used for high-frequency heat dissipation of radar and communication equipment.

Other fields

Laser welding electrode: high melting point+high thermal conductivity, reducing electrode loss.

Nuclear fusion experimental device: As a candidate for the first wall material, it can withstand plasma shock.