Basic characteristics

High melting point: 2620 ° C, suitable for high-temperature environments such as vacuum furnaces and semiconductor processes.

High strength: High tensile strength, especially maintaining good mechanical properties at high temperatures.

Low thermal expansion coefficient: compatible with glass and ceramics, used for electronic packaging.

Good thermal/electrical conductivity: suitable for electronic component heat dissipation layers or electrodes.

Corrosion resistance: resistant to erosion by molten glass and metal salts, but prone to oxidation at high temperatures (requires inert gas protection).

Common specifications

Thickness: 0.01mm~0.2mm (ultra-thin foil can reach micrometer level).

Width: usually ≤ 300mm (larger sizes can be customized).

Purity: ≥ 99.95% (high-purity grade used for semiconductors).

Main applications

Electronic industry:

Substrate and sputtering target material for semiconductor chips.

Electrode materials for flexible circuits and thin-film solar cells.

High temperature field:

Vacuum furnace insulation screen, high-temperature sensor substrate.

Support pad for sapphire single crystal growth furnace.

Aerospace:

High temperature resistant coating substrate for rocket nozzles and satellite components.

Medical: The base material for the rotating anode of X-ray tubes.